Kioxia, the renamed Toshiba, says it will sample a 112-layer TLC flash in Q1. It is the fifth-generation BiCS FLASH 3D flash memory. The fifth-generation process technology should deliver 1 terabit (128 gigabytes) TLC and 1.33 terabit 4-bit-per-cell (quadruple-level cell, QLC) devices. The 112-layer stacking process technology increases cell array density by approximately 20% over ...
This story continues at 112 layer flash to be sampled in Q1
Or just read more coverage at Electronics Weekly