Samdung’s foundry business says it has a PDK available for its 3nm node called 3GAE. This is the node that moves from finfet to gate-all-around. Samsung calls the GAA transistor Multi-Bridge Channel FET (MBCFET). Samsung illustrates above how a FinFET layout compares to GAA.. The supply voltage VDD for 3GAE will scale to 0.7V. 3GAE ...

This story continues at Samsung has PDK for 3nm Gate-All-Around process

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