Imec reports improved performance for both Ge-based n-type FinFETs and Ge-based p-type gate-all-around (GAA) devices. For Ge n-type FinFETs, pre-gate stack process optimization dramatically improved reliability and performance, with 100 percent improvement in positive bias temperature instability (PBTI) and improvement in GmSAT vs. SSSAT benchmark. For the Ge-based p-type GAA device, excellent short-channel control and ...

This story continues at Advances in Ge-based finfet and GAA devices

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