ST Microelectronics has announced a 650V 40A IGBT in a TO-247 package, the first of what will become its previously-announced HB2 series. “The HB2 series has outstanding conduction performance thanks to a VCEsat of 1.55V,” said ST. “At the same time, dynamic behaviour is enhanced due to reduced gate charge that enables fast switching at ...
This story continues at PCIM: 650V 40A IGBT
Or just read more coverage at Electronics Weekly