Vishay has announced an Rds(on) x Qg figure-of-merit of 3.1 Ω*nC for its latest fourth generation 600V E Series power n-channel mosfet, claiming that “this results in the industry’s lowest gate charge times on-resistance for devices in the same class”, said the firm, where ‘class’ is 600V mosfets used in power conversion applications. Called SiHH068N60E, its on-resistance is 27% ...

This story continues at Vishay claims best FOM for 600V superjunction mosfet

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