X-FAB, the analogue/mixed-signal and specialty foundry, has begun  full volume production of its high temperature galvanic isolation semiconductor process. The technology is fully automotive qualified. Galvanic isolation electrically separates circuits in order to improve noise immunity, remove ground loops, and increase common mode voltage. It can also protect human interfaces from contact with high voltages. An example ...

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Samsung has begun mass producing the industry’s first 1TB embedded Universal Flash Storage (eUFS) 2.1, for use in mobile applications. Phones will have storage capacity comparable to a premium notebook PC, without having to pair their phones with additional memory cards. “The 1TB eUFS is expected to play a critical role in bringing a more ...

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AMD has announced the 7th amendment to its wafer supply agreement with GLOBALFOUNDRIES  see this link. ‘AMD remains an important strategic partner as we reshape our portfolio to intensify investment in the technologies that provide the most value to customers,’ says GloFo, ‘we are proud to be a critical supplier of AMD’s current-generation 14nm and 12nm ...

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Osram Opto Semiconductors is introducing its second-generation blue multi-mode laser diode, which double the range of previous LED solutions up to 600 metres. It also simplifies system design when used in the auxiliary high beam lights of vehicles. Used as a light source for auxiliary high beams, Osram’s PLPT9 450D_E A01 laser makes driving at ...

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ACEINNA today announced its new INS1000 state-of-the-art, high performance dual band RTK INS (Real-Time Kinematic Inertial Navigation System) with built-in inertial sensors for construction, agriculture and automotive applications. The INS1000 embeds ACEINNA’s 9 degree-of-freedom inertial sensor technology to achieve Automotive Dead Reckoning performance in GNSS challenged environments like urban canyons, heavily tree lined roads, tunnels, ...

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With the SPAD2L192, LASER COMPONENTS offers a solid-state CMOS sensor for Flash LiDAR applications. The single photon avalanche diode (SPAD) array has a resolution of 192 x 2 pixels. The in-pixel time-to-digital converter, which features a temporal resolution of 312.5 ps and a scale value of 1.28 μs, enables a nominal range of up to ...

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