GaN power transistors can shrink AC‑DC power supplies and cut losses but, to get the best out of them, their gate drive waveform needs careful attention. As a German team pointed out at ISSCC, GaN transistors have a threshold voltage of ~1V, which makes them vulnerable to spurious turn‑on through the Miller capacitance, particularly when ...

This story continues at ISSCC: Novel gate drive improves GaN power transistor switching

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