Macom has announced a 500W (peak) GaN-on-Si power transistor for pulsed L-Band airport surveillance radar at 1.2-1.4GHz. Called MAGX-101214-500, greater than 70% power efficiency is claimed during 50V pulsed operation. “Supplied in a small-footprint ceramic flanged package and supporting matching structures that minimise circuit size, MAGX-101214-500 transistors help to enable rugged, compact radar systems underpinned with ...

This story continues at GaN-on-Si RF power transistor hits 500W for radar

Or just read more coverage at Electronics Weekly