Photonics can be added to silicon CMOS, creating infra-red LEDs and photo-diodes using layers of molybdenum telluride, according to MIT. As a back-end process over CMOS, the team fabricated a p-n junction with an infra-red bandgap from a bi-layer of the two-dimensional dichalcogenide MoTe2. “Researchers have been trying to find materials that are compatible with silicon, ...

This story continues at Back-end process adds LEDs and photo-diodes to silicon for on-chip comms

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