Toshiba is sampling a 3D NAND TLC memory which uses TSVs. Shipments of prototypes for development purposes started in June, and product samples are scheduled for release in the second half of 2017. Devices with TSV technology have vertical electrodes and vias that pass through silicon dies to provide connections, an architecture that realizes high ...

This story continues at Toshiba sampling 3D NAND with TSVs

Or just read more coverage at Electronics Weekly