Researchers from Holst Centre have uses spatial atomic layer deposition (sALD) to create both the semiconductor and dielectric layer in a thin-film transistor (TFT) backplane.  Using a low-temperature, large-area process for the backplane, the team created a 200 ppi QVGA display demonstrator.  The process allows TFTs to be produced on cheaper, transparent plastic foils, significantly ...

This story continues at TFT backplane made using sALD

Or just read more coverage at Electronics Weekly