Bosch adds Cortex-M0+ to 9-axis sensor
Bosch Sensortec has introduced a 9-axis motion sensor which incorporates an accelerometer, a gyroscope and a magnetometer with an ARM Cortex M0+ processor, an Atmel SAMD20 microcontroller. The BMF055 is available in a 5.2 x 3.8 x 1.1mm package. There is a software development kit which includes a pre-compiled BSX Lite fusion library with integration ...
Bosch adds Cortex-M0+ to 9-axis sensor
Bosch Sensortec has introduced a 9-axis motion sensor which incorporates an accelerometer, a gyroscope and a magnetometer with an ARM Cortex M0+ processor, an Atmel SAMD20 microcontroller. The BMF055 is available in a 5.2 x 3.8 x 1.1mm package. There is a software development kit which includes a pre-compiled BSX Lite fusion library with integration ...
Samsung says it will report a $6.3 billion operating profit in its semiconductor business in Q3 compared to a $3.55 billion profit in Q3 2014. Samsung shipped 8% more units y-o-y and ASPs must also have improved. Income from the A9 must have boosted Q3 sales and favourable exchange rates also helped. With an ailing ...
Samsung says it will report a $6.3 billion operating profit in its semiconductor business in Q3 compared to a $3.55 billion profit in Q3 2014. Samsung shipped 8% more units y-o-y and ASPs must also have improved. Income from the A9 must have boosted Q3 sales and favourable exchange rates also helped. With an ailing ...
Car radars push spectrum analysis to the limits
Test for automotive radars is at the frontier of what is currently possible and requires spectrum analysers that cover the frequency range up to 81GHz and offer analysis bandwidths up to 2GHz, write Steffen Heuel and Wolfgang Wendler Radar sensors measure the range, radial velocity and location of targets in the vicinity under any weather ...
Car radars push spectrum analysis to the limits
Test for automotive radars is at the frontier of what is currently possible and requires spectrum analysers that cover the frequency range up to 81GHz and offer analysis bandwidths up to 2GHz, write Steffen Heuel and Wolfgang Wendler Radar sensors measure the range, radial velocity and location of targets in the vicinity under any weather ...
Samsung says it will report a $6.3 billion operating profit in its semiconductor business in Q3 compared to a $3.55 billion profit in Q3 2014.
Samsung shipped 8% more units y-o-y and ASPs must also have improved.
Income from the A9 must have boosted Q3 sales and favourable exchange rates also helped.
With an ailing phone business, Samsung is becoming more reliant on its semiconductor division for profit.
Mitsubishi creates all-SiC 3.3kV 1.5kA traction inverter
Researchers at Mitsubishi have created custom mosfets for an all silicon carbide 3.3kV 1.5kA dc to three-phase traction inverter for railway trains, claiming the inverter to be a world first. The company has already operated a hybrid design with silicon IGBTs and 1.7kV SiC Schottkys on an underground train, which demonstrated 38.6% power savings compared ...
Mitsubishi creates all-SiC 3.3kV 1.5kA traction inverter
Researchers at Mitsubishi have created custom mosfets for an all silicon carbide 3.3kV 1.5kA dc to three-phase traction inverter for railway trains, claiming the inverter to be a world first. The company has already operated a hybrid design with silicon IGBTs and 1.7kV SiC Schottkys on an underground train, which demonstrated 38.6% power savings compared ...
Researchers at Mitsubishi have created custom mosfets for an all silicon carbide 3.3kV 1.5kA dc to three-phase traction inverter for railway trains, claiming the inverter to be a world first.
The company has already operated a hybrid design with silicon IGBTs and 1.7kV SiC Schottkys on an underground train, which demonstrated 38.6% power savings compared with the conventional system.
Custom 3.3kV 1.5kA SiC mosfets and Schottky diodes were created for the all-SiC project, and built into modules with one transistor and one diode. In all, the inverter has 16 modules. Switching losses in the inverter are claimed to be 55% better than the silicon equivalent.
To get conduction losses as low as equivalent silicon IGBTs, mosfet cell structure was optimised, and the JFET region (‘JD’ in the diagram) of the mosfets was n-doped by high energy nitrogen implantation to reduced JFET on-resistance at high temperature.
For stable avalanche breakdown (~4kV), a field-limiting ring structure was developed for edge termination in both devices.
Also for stability, the reverse diode inherent in the mosfet structure was optimised for a long working life carrying current alongside the Schottky, rather than needing to be shorted by the Schottky.
Final mosfet active area is 0.83cm2, and the Schottkys each cover 0.74cm2.
Report ‘3.3kV/1500A power modules for the world’s first all-SiC traction inverter‘ in the Japanese Journal of Applied Physics describes the SiC semiconductors.
The research is also featured in the September 2015 issue of the JSAP Bulletin, from which the diagrams are taken.
