Diodes is aiming at automotive point-of-load converters with a 1A buck converter that can run from 5V and 3.3V rails. Output can span 600mV to 3.6V. Called AP61100Q, the chip has synchronous rectification – with a 110mΩ high-side mosfet and 80mΩ low-side mosfet. Operation is across 2.3 – 5.5V and -40 to +125°C (ambient, 150°C junction), ...
This story continues at Automotive 1A PoL converter has PWM and PFM for better efficiency
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Frontier is aiming at better-looking DAB+ radio products with a ‘Pro’ range of chips, modules and software. Its Kino 4-Pro chip has a larger memory than its earlier silicon, allowing features to be added without compromising performance. Siena-Pro (see image) is a module built around Kino 4-Pro. To ease migration, Kino 4-Pro and Siena-Pro are ...
This story continues at DAB chips and modules for prettier user interfaces from Frontier
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Advantest’s H5620ES engineering test system is designed for burn-in and core testing of DDR4, DDR5 and LPDDR devices in laboratory environments. “Like its sister system, the H5620 production unit, the new tester parallel tests both DDR4 and DDR5 memories. It can accommodate memory ICs with 100MHz frequencies and 200Mbit/s data rates,” said the company, adding ...
This story continues at Memory test and burn-in for 5G development labs
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Renesas has introduced a pair of 100V half-bridge mosfet gate drivers. HIP2211 is a pin-compatible upgrade to the company’s existing ISL2111 and has separate high-side and low-side PWM input pins, leaving dead-time control up to the hose microcontroller. PWM inputs are 3.3V logic and Vdd tolerant. Comes in 8-lead SOIC or 10-lead 4 x 4mm TDFN. ...
This story continues at 100V half-bridge driver updates ISL2111
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Lattice Semiconductor has released the second family of devices developed from its Nexus 28nm FDSoI platform, equipping them with fast PCI Express (PCIe) and Gigabit Ethernet interfaces for co-processing, signal bridging, and system control. Certus-NX FPGAs, as they will be known, are intended to be general purpose, aimed at applications from data processing in automated ...
This story continues at Lattice puts fast I/O on low-power FPGA for IoT edge
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NewTek’s HATR series of ac-operated LVDT displacement sensors are hermetically-sealed for use in tough contaminated environments such as pulp and paper mills. “As ac-operated linear position sensors, HATR Series is not limited by internal electronics that can fail in extreme environments,” according to the company. They have welded 19mm metal housing and can operate at ...
This story continues at Hermetic LVDT displacement sensor for tough contaminated environments
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Vicor is aiming at VPX conduction-cooled chassis in avionics and ships with a 1kW multi-output PSU that runs from a 28V dc rail. Designed for 6U OpenVPX systems, this VITA-62 compliant power supply runs on 18-42Vin, while producing 3.3V (0-30A), 5V (0-32A), 12V (0-70A), 12V (1A), -12V (1A) – the 5V rail and high-power 12V rail ...
This story continues at Mil spec 28Vin 1kW PSU with multiple outputs
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Scientist in Australia have used a custom perovskite solar cell to increase the efficiency of solar hydrogen production close to the point thought to be commercially viable. Solar-to-hydrogen production from water and light was 17.6% efficient, despite the relatively humble solar materials involved – silicon and perovskite – compared to a 20% target set by ...
This story continues at Perovskite solar pushes up efficiency in hydrogen-making cell
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Nexperia has announced a range of automotive-qualified discrete semiconductors in DFN packages, claiming it to be industry’s widest portfolio. Included are bipolar transistors, n-channel mosfets, p-channel mosfets, Schottkys, Zeners, switching diodes and protection diodes, as well as resistor-equipped transistors and LED drivers. “Automotive qualified discrete leadless packages range from the very small DFN1006BD-2 [1 x 0.6 ...
This story continues at AEC-Q101 qualified discrete semiconductors in DFN packages
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CEA-Leti scientists have made FDSOI CMOS at 500°C, “while showing strong performance gains especially in p-type MOS logic devices”, according to the French lab, which has branded the process ‘CoolCube’. 500°C processing is important when trying to shrink die by building CMOS with p-channel mosfets above rather than next to their n-channel counterparts – called a ‘3D ...
This story continues at Leti makes CMOS at 500°C for 3D sequential chips
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