Author Archives: steve bush

Glasgow transistor improves margins in DRAM

“More than 50% reduction of the statistical variability compared to bulk mosfets with identical dimensions”, is the claim of Glasgow-based Semiwise for its ‘flat field transistor’, which “is complemented by 30% performance increase and 5% reduction of the manufacturing costs compared to the equivalent bulk CMOS technology transistors.” The company is aiming its flat field ...

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APEC: Fabless UK GaN company reveals easily-driven power transistors, with current sense

UK fab-less semiconductor company Cambridge GaN Devices has finally revealed its initial product range, at APEC in Houston. The company is using monolithic GaN integration, branded ‘ICeGaN’, to modify the gate behaviour of GaN power transistors, without using cascode-pairing,  to make them compatible with drivers made for traditional silicon mosfets. At the same time, it ...

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Updated: PragmatIC to build a second printed IC line in the North East

PragmatIC Semiconductor is building a second fabrication line for its flexible printed semiconductors in County Durham, this time on a brown-field site in Meadowfield near Durham. ‘PragmatIC Park’ as it will be known, is starting with a 175,000ft2 (~16,300m2) building on the St John’s road industrial estate, the site of multiple re-developments. “We chose this site ...

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APEC week: 3.3kV mosfet and Schottky

Microchip has unveiled a 3.3kV silicon carbide mosfet and mating Schottky diodes. MSC025SMA330 is the 25mΩ mosfet in a four-lead TO-247 package, and MSC090SDA330 is the 90A diode in a similar two-lead ‘T-Max’ package. Both are also available in die form. Further data on the mosfet is sadly not public at the moment, but the diode data ...

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APEC: Kilowatt-class two-phase PFC controller hits 99% efficiency

Onsemi has announced an interleaved, two-phase power factor correction controller for ‘bridge-less’ totem pole topologies from 350W to several kW of 90 – 265Vac mains input. Interleaving parallels multiple small stages, allowing more numerous smaller component to be used, distributing heat, reducing ripple amplitude and potentially lowering EMI. “Also, interleaving extends the power range of ...

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650V SiC mosfets in 7pin D2PAK

Infineon has announced 650V silicon carbide mosfets in 7pin D2PAK surface-mount packages, aimed at servers, telecoms. electric vehicle charging  and solar energy. “Trench technology is the basis for superior gate oxide reliability,” according to yhr company. “Together with an improved avalanche and short-circuit robustness this ensures the highest system reliability even in harsh environments.” They ...

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NXP and Hitachi collaborate on SIC power stage for vehicle traction inverters

NXP and Hitachi have co-designed a gate driver evaluation board for Hitachi’s 1.2kV RoadPak SiC mosfet half-bridges. The half-bridges are ~75 x 70mm and come in 580, 780 and 980A versions which are liquid-cooled – one side having a pin-fin array (just visible right) which has to be sealed into a water-glycol filled cooling manifold. Junction ...

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UK made: Ohm meter applies only 200mV to avoid damage

Hampshire (UK) based AltoNovus has created a low-applied-voltage ohmmeter for probing circuits that might be damaged by higher voltages. It is called OR-01 OhmRanger-LCV (LCV for ‘low compliance voltage’) and measures resistances from 10Ω to 100MΩ while applying 206 or 380mV (selectable) maximum to prevent harming a device under test. Maximum stimulus is limited to ~30mA. “Additional ...

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