Glasgow and Leeds researchers move towards racetrack memory
Researchers from the Universities of Glasgow and Leeds have developed materials for implementing racetrack memory. Racetrack memory uses lines of nanowires. Electricity passed through the wires creates ‘domain walls’ – spaces between the wires where information can be stored. Materials are still a key question for implementing the technology. The team from Glasgow and Leeds ...
Glasgow and Leeds researchers move towards racetrack memory
Researchers from the Universities of Glasgow and Leeds have developed materials for implementing racetrack memory. Racetrack memory uses lines of nanowires. Electricity passed through the wires creates ‘domain walls’ – spaces between the wires where information can be stored. Materials are still a key question for implementing the technology. The team from Glasgow and Leeds ...
Glasgow and Leeds researchers move towards racetrack memory
Researchers from the Universities of Glasgow and Leeds have developed materials for implementing racetrack memory. Racetrack memory uses lines of nanowires. Electricity passed through the wires creates ‘domain walls’ – spaces between the wires where information can be stored. Materials are still a key question for implementing the technology. The team from Glasgow and Leeds ...
Glasgow and Leeds researchers move towards racetrack memory
Researchers from the Universities of Glasgow and Leeds have developed materials for implementing racetrack memory. Racetrack memory uses lines of nanowires. Electricity passed through the wires creates ‘domain walls’ – spaces between the wires where information can be stored. Materials are still a key question for implementing the technology. The team from Glasgow and Leeds ...
Glasgow and Leeds researchers move towards racetrack memory
Researchers from the Universities of Glasgow and Leeds have developed materials for implementing racetrack memory. Racetrack memory uses lines of nanowires. Electricity passed through the wires creates ‘domain walls’ – spaces between the wires where information can be stored. Materials are still a key question for implementing the technology. The team from Glasgow and Leeds ...
Imec showed at IEDM the integration of high mobility InGaAs as a channel material for 3D vertical NAND memory devices formed in the plug (holes) with the diameter down to 45nm. The channel material improves transconductance (gm) and read current which is crucial to enable further VNAND cost reduction by adding additional layers in 3D ...
Imec showed at IEDM the integration of high mobility InGaAs as a channel material for 3D vertical NAND memory devices formed in the plug (holes) with the diameter down to 45nm. The channel material improves transconductance (gm) and read current which is crucial to enable further VNAND cost reduction by adding additional layers in 3D ...
EC starts anti-trust action against Qualcomm
The EC has filed antitrust charges against Qualcomm saying that the company paid customers to take chips exclusively from itself and sold chips below cost to force out competitors. “I am concerned that Qualcomm’s actions may have pushed out competitors or prevented them from competing,” says EC Competition Commissioner Margrethe Vestager, “we need to make sure that ...
EC starts anti-trust action against Qualcomm
The EC has filed antitrust charges against Qualcomm saying that Qualcomm paid customers to take chips exclusively from Qualcomm and sold chips below cost to force out competitors. “I am concerned that Qualcomm’s actions may have pushed out competitors or prevented them from competing,” says EC Competition Commissioner Margrethe Vestager, “we need to make sure ...
China has entered the bidding for Fairchild, reports Reuters. Fairchild had received a $2.4 billion offer from ON Semiconductor of $20 per share and now a group led by government-owned China Resources Holdings, including private equity fund Hua Capital Management, has offered $21.70 a share valuing Fairchild at $2.46 billion. Hua recently bought US digital ...
