STMicroelectronics has put an isolated gate driver for silicon carbide mosfets into a 5 x 4mm narrow-body SO-8 package. Despite the narrow package, the STGAP2SiCSN is rated for 4.8kVpeak isolation and a voltage rail up to 1,700V. Junction to ambient thermal resistance is 123°C/W. Drive is 4A sink and source at 25°C at up to 26V – ...

This story continues at Isolated SiC mosfet gate driver comes in narrow SO-8

Or just read more coverage at Electronics Weekly